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K7B321825M Datasheet, Samsung semiconductor

K7B321825M Datasheet, Samsung semiconductor

K7B321825M

datasheet Download (Size : 304.66KB)

K7B321825M Datasheet

K7B321825M sram equivalent, 1mx36 & 2mx18 synchronous sram.

K7B321825M

datasheet Download (Size : 304.66KB)

K7B321825M Datasheet

Features and benefits


* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Sup.

Application

G W, B W, LBO, ZZ. Write cycles are internally selftimed and synchronous. Full bus-width write is done by GW, and each .

Description

The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and .

Image gallery

K7B321825M Page 1 K7B321825M Page 2 K7B321825M Page 3

TAGS

K7B321825M
1Mx36
2Mx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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